期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 673, 期 -, 页码 54-59出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.02.215
关键词
Tin compounds; Resistive switching; Annealing
资金
- Engineering and Physical Sciences Research Council [EP/K018884/1] Funding Source: researchfish
- EPSRC [EP/K018884/1] Funding Source: UKRI
A resistive random-access memory based on an Al/SnOx/Pt structure is demonstrated. The SnOx thin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching characteristics after annealing at 300 degrees C in nitrogen. The obtained memory devices show good stability with a relatively long retention time, exceeding 10(5) s. The resistance ratio remains above 55 within the duration of 100 endurance cycles. An interface modified space-charge-limited-current model is proposed as a possible switching mechanism. The achieved characteristics of the resistive switching in SnOx films seem to be a promising candidate for nonvolatile memory applications. (C) 2016 Elsevier B.V. All rights reserved.
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