期刊
JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 615, 期 -, 页码 87-94出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2022.01.107
关键词
Hydrogen peroxide; Carbon nitride; Photocatalytic; High yield
资金
- Natural Science Foundation of Shanghai [19ZR1420200]
- Science and Technology Commission of Shanghai Municipality [14DZ2261000, 19DZ2271100]
- Shanghai Committee of science and Technol-ogy [17DZ2282800]
In this study, P-doped CN photocatalyst with high efficiency for H2O2 production was successfully synthesized using a simple one-step calcination method. The mechanism of H2O2 production over P-CN was revealed through density functional theory calculations, showing that P-doping promotes the adsorption of O-2 on CN and enhances the formation of intermediate products. Experimental results confirmed that P-doping suppresses electron and hole recombination, leading to improved photocatalytic performance of P-doped CN.
Melon-based carbon nitride (CN) is a semiconductor photocatalyst with a conduction band position suitable for photocatalytic H2O2 production. However, the thermodynamic inability to adsorb O-2 molecules greatly limits its photocatalytic efficiency for H2O2 production. In this paper, P-doped CN with good performance for H2O2 production was synthesized by a simple one-step calcination method. The experimental results show that when the doping amount of P is about 9.0 wt% of CN, the yield of H2O2 can reach 12990 lM/h/g, which is about 6.6 times as that of pure CN. The mechanism of H2O2 production over P-CN was firstly revealed by using the density functional theory calculations based on the melon crystal structure of carbon nitride. The results show that P-doping is easier to the strong thermodynamic adsorption of O-2 on CN, which is more beneficial to the formation of intermediate products. Further experimental results show that the substitution of C in CN by P-doping suppresses the electron and hole recombination, and therefore promoting the photocatalytic performance of P-doped CN. (c) 2022 Elsevier Inc. All rights reserved.
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