Distance-dependent resonance energy transfer in alkyl-terminated Si nanocrystal solids

Understanding and controlling the energy transfer between silicon nanocrystals is of significant importance for the design of efficient optoelectronic devices. However, previous studies on silicon nanocrystal energy transfer were limited because of the strict requirements to precisely control the inter-dot distance and to perform all measurements in air-free environments to preclude the effect of ambient oxygen. Here, we systematically investigate the distance-dependent resonance energy transfer in alkyl-terminated silicon nanocrystals for the first time. Silicon nanocrystal solids with inter-dot distances varying from 3 to 5 nm are fabricated by varying the length and surface coverage of alkyl ligands in solution-phase and gas-phase functionalized silicon nanocrystals. The inter-dot energy transfer rates are extracted from steady-state and time-resolved photoluminescence measurements, enabling a direct comparison to theoretical predictions. Our results reveal that the distance-dependent energy transfer rates in Si NCs decay faster than predicted by the Forster mechanism, suggesting higher-order multipole interactions. Published under an exclusive license by AIP Publishing.

Automated summary

Understanding and controlling energy transfer between silicon nanocrystals is crucial for designing efficient optoelectronic devices. This study systematically investigates the distance-dependent resonance energy transfer in alkyl-terminated silicon nanocrystals. The results reveal that the energy transfer rates decay faster than predicted by the Forster mechanism, suggesting higher-order multipole interactions.