相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Influence of Al x Ga1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)
Abhiram Gundimeda et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
Petr Vacek et al.
JOURNAL OF APPLIED PHYSICS (2021)
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM
Lok Yi Lee et al.
JOURNAL OF APPLIED PHYSICS (2019)
Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Lok Yi Lee et al.
JOURNAL OF APPLIED PHYSICS (2018)
Cubic zincblende gallium nitride for green-wavelength light-emitting diodes
Lok Yi Lee
MATERIALS SCIENCE AND TECHNOLOGY (2017)
X-ray diffraction analysis of cubic zincblende III-nitrides
Martin Frentrup et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
Shuji Nakamura
REVIEWS OF MODERN PHYSICS (2015)
Prospects of III-nitride optoelectronics grown on Si
D. Zhu et al.
REPORTS ON PROGRESS IN PHYSICS (2013)
High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
J. Stellmach et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Cubic group-III nitride-based nanostructures-basics and applications in optoelectronics
D. J. As
MICROELECTRONICS JOURNAL (2009)
Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF-MBE
R Kimura et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors
KM Mazaev et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition
K Lorenz et al.
APPLIED PHYSICS LETTERS (2000)
MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates
CH Wei et al.
JOURNAL OF ELECTRONIC MATERIALS (2000)