Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1-xN nucleation layers

The influence of AlGaN nucleation layers on zincblende GaN epilayers was studied to investigate the formation of wurtzite phase inclusions in the epilayer. GaN epilayers grown on AlGaN nucleation layers with varying aluminum contents suffer from the increasing presence of wurtzite inclusions as the aluminum content of the nucleation layer increases. High-resolution transmission electron microscopy along with four-dimensional scanning transmission electron microscopy is used to investigate the origin of the wurtzite inclusions in the nucleation layer and at the GaN/AlGaN interface. It was observed that a GaN nucleation layer and an Al0.95Ga0.05N nucleation layer grew in the zincblende and wurtzite phase, respectively. These phases were then adopted by the overgrown GaN epilayers. For a GaN epilayer on an Al0.29Ga0.71N nucleation layer, wurtzite inclusions tend to form at the GaN/ Al0.29Ga0.71N interface due to strong {111}-type faceting observed in the zincblende nucleation layer. This strong faceting is correlated with an enrichment of aluminum in the upper part of the nucleation layer, as observed in energy dispersive x-ray spectroscopy, which may influence the kinetics or thermodynamics controlling the surface morphology. (C) 2022 Author(s).

Automated summary

The influence of AlGaN nucleation layers on zincblende GaN epilayers and the formation of wurtzite phase inclusions in the epilayer were studied. It was found that an increase in aluminum content in the AlGaN nucleation layer leads to an increased presence of wurtzite inclusions. The strong {111}-type faceting observed in the zincblende nucleation layer on an Al0.29Ga0.71N nucleation layer contributes to the formation of wurtzite inclusions at the GaN/ Al0.29Ga0.71N interface.