4.7 Article

Synthesis of n-type ZrO2 doped ε-Ga2O3 thin films by PLD and fabrication of Schottky diode

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Summary: This study successfully achieved n-type doping in ε-Ga2O3 thin films through a post-deposition treatment, using a SnO2 film as the dopant. Good electrical performance was obtained at 600 degrees Celsius, demonstrating an effective doping method.

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