Synthesis of n-type ZrO2 doped ε-Ga2O3 thin films by PLD and fabrication of Schottky diode

Tin-assisted pure phase n-type ZrO2-doped epsilon-Ga2O3 films were synthesized by pulsed laser deposition (PLD) and deposited on (0001) epi-GaN/sapphire substrates. The characterization of n-type ZrO2-doped epsilon-Ga2O3 thin films and the electrical properties of SBD based on that film were investigated in details. From XRD, the pure Zr-doped epsilon-Ga2O3 without diffraction peaks of zirconia suggested the formation of epsilon-(ZrxGa1-x)(2)O-3 solid solution. The surface morphology and chemical content of the epsilon-Ga2O3 thin film were studied by AFM and XPS. The electrical resistivity and related free carrier concentration at room temperature were measured to be 108 Omega middotcm and 5.5 x 10(15) cm(-3), respectively, and mobility up to 10.3 cm(2)/Vmiddots. The Schottky barrier diode possessed a rectification ratio up to 10(6)similar to 10(7), breakdown voltage of 392 V, and the interface states density from 2.4 x 10(13) cm(-2) eV(-1) to 6.4 x 10(14) cm(-2) eV(-1) with the trap energy level from 0.89 eV to 0.94 eV below the bottom of the conduction band. (C) 2021 Published by Elsevier B.V.

Automated summary

The study focused on tin-assisted pure phase n-type ZrO2-doped epsilon-Ga2O3 films grown on epi-GaN/sapphire substrates using pulsed laser deposition. The thin films were characterized for their crystal structure and electrical properties, with a Schottky barrier diode exhibiting high rectification ratio and breakdown voltage. Interface states density and trap energy levels were also analyzed, showing promising results for potential applications.