期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 903, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2022.163836
关键词
ZnO; Silicon; Isotype heterojunction; Wavelength selective photodetector; Photoluminescence; Photoconductivity
资金
- Operational Programme Competitiveness, Entrepreneurship and Innovation (NSRF 2014-2020) [MIS 5002409]
- Greece and the European Union (European Regional Development Fund)
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [GrK1952/2]
An isotype heterojunction n(+)-ZnO/n-Si photodetector has been developed, which can operate in a wavelength-selective or broadband manner depending on the applied bias voltage. At zero bias, it can distinguish between UV, visible, and near IR photons by controlling the polarity of the photocurrent.
An isotype heterojunction n(+)-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at self-powered (zero bias) operation, it distinguishes between UV, visible, and near IR (NIR) photons by polarity control of the photocurrent. The photodetector is developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by electric contact deposition and annealing. Photoluminescence measurements reveal high optical quality and improved crystallinity of annealed ZnO on silicon. Photocurrent measurements as a function of illumination wavelength and bias voltage show small negative values in the UV-visible spectral range at zero and positive bias voltage and high positive values in the NIR spectral range. For these measurements, we consider the electric contact to ZnO as the anode and the electric contact to silicon as the cathode. At negative bias voltage, the device shows broadband operation with high photocurrent values across the UV-vis-NIR. (C) 2022 Elsevier B.V. All rights reserved.
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