4.7 Article

Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/ semipolar GaN free-standing substrates

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 898, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.162817

关键词

GaN bulk substrates; Nonpolar and semipolar crystals; Schottky barrier diodes; Barrier inhomogeneity

资金

  1. Key-Area Research and Development Program of Guangdong Province [2020B0303050001, 2019B010128002, 2020B010183001]
  2. GDAS' Project of Science and Technology Development [2020GDASYL20200103117, 2021GDASYL-20210103075, 2018GDASCX-0112]
  3. China Postdoctoral Science Foundation [2021M690748, 2021TQ0080]

向作者/读者索取更多资源

This study focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes fabricated on GaN bulk substrates with different crystal orientations. The results show that the crystal orientation of the GaN substrate has a significant impact on the Schottky barrier height, reverse leakage current, and barrier inhomogeneity of the devices.
This work focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes (SBDs) fabricated on GaN bulk substrates with different crystal orientations. For the SBDs on a-plane, m-plane, and s5-plane GaN, the Schottky barrier heights (SBHs) exhibited magnitudes of 0.65 eV, 0.69 eV, and 0.75 eV, respectively. The relatively small SBH of a-plane devices results in a relatively larger reverse leakage current than that of m-plane and s5-plane. In addition, the carrier concentrations extracted by C-V characteristics are comparable for the GaN substrates with different crystal orientations. The temperature-dependent I-V characteristics indicate how the barrier inhomogeneity of the Ni/GaN Schottky contacts on the a-plane GaN is smaller than the others. Based on the XPS spectra results, the discrepancy in Schottky contact characteristics stems from the different polarization charges and/or surface oxides of the different crystal planes. The low GaOx density on a-plane GaN surface contributes to the minimum barrier inhomogeneity of the corresponding SBD devices. (c) 2021 Elsevier B.V. All rights reserved.

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