相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method
Etsuko Ohba et al.
JOURNAL OF CRYSTAL GROWTH (2021)
Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy
Yongzhao Yao et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography
Yongzhao Yao et al.
JOURNAL OF APPLIED PHYSICS (2020)
Subsurface-damaged layer in (010)-oriented β-Ga2O3 substrates
Hirotaka Yamaguchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography
Satoshi Masuya et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Guest Editorial: The dawn of gallium oxide microelectronics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2018)
Stacking faults in β-Ga2O3 crystals observed by X-ray topography
Hirotaka Yamaguchi et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2018)
Indentation Hardness Measurements at Macro-, Micro-, and Nanoscale: A Critical Overview
Esteban Broitman
TRIBOLOGY LETTERS (2017)
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Zbigniew Galazka et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method
Etsuko Ohba et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process
Osamu Ueda et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes
Makoto Kasu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Observation of nanometer-sized crystalline grooves in as-grown β-Ga2O3 single crystals
Kenji Hanada et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
K. Hoshikawa et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Slip system analysis and X-ray topographic study on β-Ga2O3
Hirotaka Yamaguchi et al.
SUPERLATTICES AND MICROSTRUCTURES (2016)
Characterization of defects in β-Ga2O3 single crystals
Katsuhiko Nakai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases
Haiying He et al.
PHYSICAL REVIEW B (2006)
Fabrication of hexagonal GaN on the surface of βGa2O3 single crystal by nitridation with NH3
S Ohira et al.
THIN SOLID FILMS (2006)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
M Orita et al.
APPLIED PHYSICS LETTERS (2000)
Czochralski grown Ga2O3 crystals
Y Tomm et al.
JOURNAL OF CRYSTAL GROWTH (2000)
分享论文
