4.3 Article

Buckling-induced quadratic nonlinearity in silicon phonon waveguide structures

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JAPANESE JOURNAL OF APPLIED PHYSICS
卷 61, 期 SD, 页码 -

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IOP Publishing Ltd
DOI: 10.35848/1347-4065/ac5532

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MEMS; phonon waveguide; nonlinearity; mechanical nonlinearity

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The research team successfully fabricated and characterized a silicon phonon waveguide structure with PZT piezoelectric transducers, enabling the evaluation of nonlinearity. They observed a softening nonlinear response as a function of drive power and demonstrated the ability for mode shift and frequency conversion.
We fabricated and characterized a single-crystal silicon phonon waveguide structure with lead zirconate titanate (PZT) piezoelectric transducers. The compressive stress in a silicon-on-insulator wafer causes a membrane waveguide to buckle, leading to the quadratic nonlinearity. The PZT transducer integrated in an on-chip configuration enables us to excite high-intensity mechanical vibration, which allows the characterization of nonlinear behavior. We observed a softening nonlinear response as a function of the drive power and demonstrated the mode shift and frequency conversion. This is the first report of the nonlinear behavior caused by the quadratic nonlinearity in a buckled phonon waveguide structure. This study provides a method to control the sign and the order of nonlinearity in a phonon waveguide by utilizing the internal stress, which allows the precise manipulation of elastic waves in phononic integrated circuits.

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