Study into the possibility of silicon electrodeposition from a low-fluoride KCl-K2SiF6 melt

The possible use of the KCl-K2SiF6 molten system for silicon electrodeposition is considered. The kinetics of silicon electroreduction on glassy carbon in the KCl melt with the addition of 1 and 5 wt% K2SiF6 at 790 degrees C were studied using electroanalytical methods. It is demonstrated that the appearance of fluoride ions provides the required amount of silicon ions for silicon electrodeposition. Silicon electroreduction is shown to comprise a reversible single 4-electron process. According to the Berzins-Delahay equation for an electrochemically reversible process, the diffusion coefficient of electroactive ions calculated as equal to 4 center dot 10(-6) cm(2) s(-1). The electrodeposition of silicon on a glassy carbon substrate was carried out in potentiostatic mode in the range of potentials from -0.1 to -0.25 V. As a result, silicon fibers with an average diameter of 200-300 nm were observed.

Automated summary

This study investigates the kinetics of silicon electrodeposition in the KCl-K2SiF6 molten system and demonstrates that the presence of fluoride ions allows for the required amount of silicon ions. Additionally, silicon electrodeposition is shown to be a reversible 4-electron process.