Grain size effect of FCC polycrystal: A new CPFEM approach based on surface geometrically necessary dislocations

A multiscale modeling methodology involving discrete dislocation dynamics (DDD) and crystal plasticity finite element method (CPFEM) was used to study the grain size effect in FCC polycrystalline plasticity. The developed model is based on the dislocation density storage recovery framework and is expanded to the scale of slip systems. DDD simulations were used to establish a constitutive law incorporating the main dislocation mechanisms that are involved in the strain hardening process observed in monotonically deformed FCC polycrystals. This was achieved by calculating the key features controlling the accumulation of the forest dislocation density within the grains and the polarized dislocation density at the grain boundaries during plastic deformation. The model was then integrated with a CPFEM model at the polycrystalline aggregate scale to compute short-and long-range internal stresses within the grains. These simulations quantitatively reproduced the deformation curves of the FCC polycrystals as a function of grain size. Because of its predictive ability to reproduce the Hall-Petch effect in a physically justified approach, the proposed framework has significant potential for further applications.

Automated summary

This study investigates the grain size effect in FCC polycrystalline plasticity using a multiscale modeling approach combining discrete dislocation dynamics (DDD) and crystal plasticity finite element method (CPFEM). The developed model quantitatively reproduces the deformation curves of FCC polycrystals and shows significant potential for further applications.