Influence of Cr Ion Implantation on Physical Properties of CuO Thin Films

Cupric oxide is a semiconductor with applications in sensors, solar cells, and solar thermal absorbers. To improve its properties, the oxide was doped with a metallic element. No studies were previously performed on Cr-doping using the ion implantation technique. The research goal of these studies is to investigate how Cr ion implantation impacts the properties of the oxide thin films. CuO thin films were deposited using magnetron sputtering, and then chromium ions with different energies and doses were implanted. Structural, optical, and vibrational properties of the samples were studied using X-ray diffraction, X-ray reflectivity, infra-red spectroscopy, Raman spectroscopy, and spectrophotometry. The surface morphology and topography were studied with ellipsometry, atomic force microscopy, and scanning electron microscopy. A simulation of the range of ions in the materials was performed. Ion implantation had an impact on the properties of thin films that could be used to tailor the optical properties of the cupric oxide and possibly also its electrical properties. A study considering the influence of ion implantation on electrical properties is proposed as further research on ion-implanted CuO thin films.

Automated summary

This study investigates the impact of chromium ion implantation on the properties of cupric oxide thin films. The results show that ion implantation can be used to tailor the optical and possibly the electrical properties of the thin films. Various characterization techniques were used to study the structural, optical, and vibrational properties of the samples.