4.7 Article Proceedings Paper

Dislocations, texture and stress development in hydrogen-cycled Pd thin films: An in-situ X-ray diffraction study

期刊

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
卷 47, 期 24, 页码 12119-12134

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijhydene.2022.01.233

关键词

Pd thin films; XRD hydrogen cycling; Morphology; Texture; Stress; Dislocations

向作者/读者索取更多资源

In this study, the microstructural changes of Pd thin films during hydrogen cycling were systematically investigated. The morphology, grain orientation, stress, and dislocation densities were analyzed for different substrate types. The results showed that the stress increase caused by lattice expansion and contraction during the Pd to Pd-hydride transition could be stabilized through grain boundary motion. Furthermore, crack-based stress relief mechanism was observed for Pd thin films on certain substrates. The findings highlight the importance of substrate compliance in enhancing the stability and mechanical properties of Pd thin films.
For Pd thin films, microstructural changes involved during hydrogen cycling provide the information needed to predict and optimize the film's mechanical strength. In this paper, a systematic study of the morphology, microstructure, texture, and stress has been performed on Pd thin films during hydrogen loading and deloading cycles at room temperature. Pd thin films of similar morphology were prepared by magnetron sputtering on substrates of different compliances, i.e., Si-oxide, Titanium (Ti) and Polyimide (PI). The evolution of the morphology, grain-orientation distribution (texture), state of stress, and dislocation densities are analyzed for each of the film substrate types for 20 hydrogen loading/deloading cycles. The lattice expansion and contraction caused by the transition from Pd to Pd-hydride and back result in a strong stress increase. This stress increase stabilizes after a few cycles by grain boundary motion that leads to a gradual enhancement of the (111) texture and changes in the dislocation density for Pd films that are strongly clamped on to an oxidized Si(100) wafer substrate with an intermediate layer (Ti or PI). For Pd on PI, the stress is also partly released by a crack-based (crack widening/growth/propagation) pathway. Pd films on Ti and PI do not buckle or blister after 20 hydrogen cycles. By providing a sufficiently compliant substrate the traditional problems of buckledelamination of a film on a stiff substrate are mitigated.(c) 2022 The Author(s). Published by Elsevier Ltd on behalf of Hydrogen Energy Publications LLC. This is an open access article under the CC BY-NC-ND license (http:// creativecommons.org/licenses/by-nc-nd/4.0/).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据