Mid-wave infrared p+-B-n InAs/InAsSb type-II superlattice photodetector with an AlAsSb/InAsSb superlattice barrier

Mid-wavelength infrared InAs/InAsSb type-II superlattice p(+)-B-n photodetectors are demonstrated. An AlAsSb/InAsSb superlattice barrier structure is introduced in order to reduce the bias dependency of optical efficiency. The photodetector exhibits a cut-off wavelength of similar to 5.0 mu m at 150 K. At 150 K and -100 mV applied bias, the photodetector exhibits a dark current density of 1.2 x 10(-4) A/cm(2), a quantum efficiency of 29% at peak responsivity (similar to 4.1 mu m), and a specific detectivity of 1.2 x 10(11) cm.Hz(1/2) /W.

Automated summary

In this study, mid-wavelength infrared InAs/InAsSb type-II superlattice p(+)-B-n photodetectors are demonstrated, with the introduction of an AlAsSb/InAsSb superlattice barrier structure to reduce bias dependency. The photodetector exhibits low dark current density, high quantum efficiency, and high specific detectivity at 150K.