InGaAs/InP Schottky barrier diode with submicron T-shaped contact and Cut-Off frequency above 9 THz

A high-performance terahertz InP Schottky Barrier Diode (SBD) with a submicron T-shaped contact structure featuring a high theoretical cut-off frequency of 9.0 THz is reported in this paper. The Schottky contact with a minimum diameter of 0.2 pm was achieved by photoresist laminate and gradient exposure process, exhibiting a minimum zero-bias junction capacitance is 0.15 fF. The quality of Schottky contact was improved by surface treatment of particles and high-temperature passivation of the edge with a polymer film, with an ideal factor of between 1.2 and 1.4. The high-frequency performance of the diode is further improved due to the small parasitic capacitance contributed by the polymer film dielectric bridge. The terahertz monolithic integration circuit based on this T-shaped contact submicron Schottky has better performance in reducing the circuit dielectric loss, exhibiting a remarkable potential for high-frequency applications.

Automated summary

This paper reports a high-performance submicron InP Schottky Barrier Diode (SBD) with a theoretical cut-off frequency of 9.0 THz. The Schottky contact, achieved through a photoresist laminate and gradient exposure process, has a minimum diameter of 0.2 pm. The quality of the contact is improved by surface treatment and high-temperature passivation with a polymer film, resulting in an ideal factor between 1.2 and 1.4.