期刊
INFRARED PHYSICS & TECHNOLOGY
卷 123, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.infrared.2022.104165
关键词
CVD graphene; Schottky barrier; Near-infrared photodiode; Open -circuit voltage; Shockley-Read-Hall recombination
资金
- Yasar University [BAP-089]
The impact of light on the Schottky barrier height in p-type graphene/n-type Si based near-infrared photodiodes is investigated. The zero-bias SBH in such photodiodes can be effectively tuned by illumination, and the nonlinear dependence of SBH on incident light is explained using the Shockley-Read-Hall model. Light-induced tunability of SBH at the graphene/semiconductor heterojunction is crucial for the development of optically driven devices with graphene as a key element.
The impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based nearinfrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.
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