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Robert A. Johnson et al.
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A. F. Witulski et al.
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Arthur F. Witulski et al.
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A. Akturk et al.
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Megan C. Casey et al.
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Eiichi Mizuta et al.
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Elizabeth C. Auden et al.
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N. Mbaye et al.
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Satoshi Kuboyama et al.
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L Scheick et al.
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A Elasser et al.
PROCEEDINGS OF THE IEEE (2002)