Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices

A method of analyzing ion-induced reverse leakage current in SiC power devices is described. The resulting methodology enables the estimation of the proportion of ion strikes that produce step increases in leakage current as well as distributions of sensitive die areas relative to leakage step magnitude. These results are compared across various bias and ion linear energy transfer combinations to isolate the influence of each variable.

Automated summary

This study presents a method for analyzing ion-induced reverse leakage current in SiC power devices, allowing for the estimation of the impact of different ion strikes on leakage current.