期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 69, 期 3, 页码 390-396出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2021.3124484
关键词
Nonvolatile memory; Electron traps; Radiation effects; Substrates; Flash memory cells; Performance evaluation; Ionizing radiation; 3-D NAND flash; ionizing radiation; memory reliability; multilevel cell (MLC); total ionizing dose (TID)
资金
- U.S. Department of Energy, Office of Nuclear Energy through the U.S. Department of Energy (DOE) Idaho Operations Office [DE-AC07-051D14517]
- Nuclear Science User Facilities Experiment
- National Science Foundation [1929099]
- Office Of The Director
- Office of Integrative Activities [1929099] Funding Source: National Science Foundation
This article evaluates the data retention characteristics of irradiated multilevel-cell NAND flash memories and proposes two strategies to improve their performance.
This article evaluates the data retention characteristics of irradiated multilevel-cell (MLC) 3-D NAND flash memories. We irradiated the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then wrote a random data pattern on the irradiated chips to find their retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded when compared to the un-irradiated ones. We evaluated two independent strategies to improve the data retention characteristics of the irradiated chips. The first method involves high-temperature annealing of the irradiated chips, while the second method suggests preprogramming the memory modules before deploying them into radiation-prone environments.
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