4.4 Article

Improvement of the Effective Spin Hall Angle by Inserting an Interfacial Layer in Sputtered BiSb Topological Insulator (Bottom)/Ferromagnet With In-Plane Magnetization

期刊

IEEE TRANSACTIONS ON MAGNETICS
卷 58, 期 4, 页码 -

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2021.3115169

关键词

Surface roughness; Substrates; Rough surfaces; Magnetic field measurement; Frequency modulation; Hall effect; Perpendicular magnetic anisotropy; BiSb; spin Hall effect; spin-orbit torque (SOT); topological insulator (TI)

资金

  1. Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology (CREST) Program [JPMJCR18T5]

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The role of an interfacial layer in improving the effective spin Hall angle in BiSb (bottom)/FM structures is investigated. It is shown that inserting an optimized thickness interfacial layer helps improve the effective spin Hall angle in the structure.
The topological insulator BiSb is promising for spin-orbit torque applications thanks to its high electrical conductivity and giant spin Hall effect. Previous works have reported a large spin Hall angle for BiSb deposited on top of a ferromagnetic layer with perpendicular magnetic anisotropy. However, since BiSb has large surface roughness, obtaining a large spin Hall angle in BiSb (bottom)/ferromagnet (FM) is more challenging than in FM/BiSb (top) structures, especially when the FM layer is very thin. Here, we investigate the role of an interfacial layer on the effective spin Hall angle in BiSb (bottom)/FM with in-plane magnetization deposited by magnetron sputtering on sapphire substrates. We showed that inserting an interfacial layer with optimized thickness helps improve the effective spin Hall angle. We achieved a relatively high effective spin Hall angle of 1.7 in BiSb (bottom)/Ru 1 nm/Co 1 nm/Pt 1 nm structure.

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