A High-Input Power Rectifier Circuit for 2.45-GHz Microwave Wireless Power Transmission

In this article, a high-input power (>30 dBm) rectifier circuit for 2.45-GHz microwave wireless power transmission is presented. To overcome the shortcomings of the traditional Schottky rectifier circuit, the novel rectifier circuit is designed based on a GaAs field-effect transistor (FET) and a Schottky diode together as the rectification part. A system-level verification demonstrates that the novel rectifier circuit has a potential application value for microwave wireless power transmission system. Measurement results show that higher input power range and MW-dc power conversion efficiency are realized at the same time by this design scheme. The maximum MW-dc conversion efficiency of the novel rectifier circuit can reach 74.42% when the input power is 30 dBm, and it is 20% higher than the peak conversion efficiency of the traditional rectifier without FET. In addition, the proposed rectifier circuit can operate with over 50% efficiency when the input power varies from 16 to 31 dBm, and has a good performance with the value of load ranging from 70 to 730 omega, it is mean that the novel rectifier circuit is able to provide power for some electronic devices with different impedance.

Automated summary

This article presents a high-input power rectifier circuit for 2.45-GHz microwave wireless power transmission, which is designed based on a GaAs FET and a Schottky diode. The novel design achieves a higher input power range and MW-dc power conversion efficiency, with a maximum conversion efficiency of 74.42% at 30 dBm input power. The circuit can operate efficiently with varying input power levels and load values, demonstrating the potential for providing power to electronic devices with different impedance.