期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 4, 页码 2051-2057出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3152473
关键词
Equivalent circuit; high power microwave (HPM); klystron; microwave tube; reltron
资金
- Directorate of Extramural Research & Intellectual Property Rights
- Defense Research and Development Organization (DRDO), Government of India, New Delhi
In this study, an equivalent circuit analysis was conducted for the dual side-coupled cavities (DSCCs), which can be used as RF interaction structures in high power microwave devices and linear accelerators. The analysis determined the equivalent shunt capacitance per unit length and series inductance per unit length for TM01 mode operation. The phase velocity and characteristic impedance of the DSCC were calculated using these equivalent circuit parameters, and the dispersion behavior of the DSCC was also explored. The analysis was validated through electromagnetic simulations.
An equivalent circuit analysis was carried out for the dual side-coupled cavities (DSCCs) suitable as RF interaction structure in the high power microwave (HPM) devices and linear accelerators. Considering lossless structure, its equivalent shunt capacitance per unit length and series inductance per unit length are determined for the TM01 mode operation. These equivalent circuit parameters were used to calculate the phase velocity and characteristic impedance of the DSCC. This was utilized further to appreciate the dispersion behavior of the DSCC. The developed analysis was also validated through electromagnetic simulations.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据