期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 6, 页码 3334-3340出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3165735
关键词
Diamond MOSFET; diamond:H; drift-region passivation; transfer doping; transition metal oxide (TMO)
资金
- U.S. Army Research Office [W911NF-13-D-0001]
- U.S.-Israel Bilateral Science Foundation [2014506]
- Direct For Computer & Info Scie & Enginr
- Div Of Information & Intelligent Systems [2014506] Funding Source: National Science Foundation
The impact of WO3 passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with WC edge contacts is studied. WO3 is found to significantly improve both contact and extrinsic channel sheet resistance, enabling fast device turn-off.
We study the impact of access region passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with tungsten Carbide (WC) edge contacts. Our experiments reveal a significant improvement to both contact and extrinsic channel sheet resistance once the access regions are passivated with WO3, indicating that WO3 is an effective surface transfer-doping agent. We analyze a peculiar bump that appears in the subthreshold characteristics of the devices that prevents their effective turn-off. The bump is found to be mitigated when the access regions are passivated by WO3. Poisson-Schrodinger (P-S) simulations suggest that this bump arises from the field-effect action by the gate over the access region immediately adjoining the gate. This parasitic field effect arises when the surface is unpinned and with a light hole concentration. Owing to its increased surface transfer doping, the use of WO3 as surface passivation is effective in delivering a sharp device turn-off.
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