A Comparative Study on Inverters Built With Dual-Gate Thin-Film Transistors Based on Depletion- or Enhancement-Mode Technologies

In the absence of a mature p-type thin-film transistor (TFT) technology, a unipolar n-type TFT technology offering two flavors of TFTs with different threshold voltage ( $V_{TH}$ ) values is more versatile than one offering only one flavor with a fixed ${V}_{TH}$ . Hitherto, a consensus has yet to be achieved on a preferred multi- ${V}_{TH}$ TFT technology based on metal-oxide-semiconductors. With its channel region sandwiched between two separate gate electrodes, a dual-gate (DG) TFT is one viable and flexible approach of operating a TFT in either the enhancement or the depletion mode. Two multi- ${V}_{TH}$ DG TFT technologies are possible, based on those offering intrinsically depletion or enhancement mode single-gate TFTs. A comparative study has been conducted, and it is concluded that the former generally offers circuits with better performance attributes.

Automated summary

In the absence of a mature p-type TFT technology, a unipolar n-type TFT technology with different threshold voltage values offers more flexibility. The dual-gate TFT is a viable and flexible approach that can operate in either the enhancement or depletion mode. A comparative study concludes that the multi-threshold voltage dual-gate TFT technology generally performs better.