期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 4, 页码 2088-2093出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3154683
关键词
FinFETs; Logic gates; Performance evaluation; Market research; Shape; Electrostatics; Electric potential; 3-nm FinFET; advanced logic technology; capacitance components; fin angle variation; gate-all-around (GAA) FET; low VDD; nanosheet (NS) FET; nano-wire (NW) FET; technology computer-aided design (TCAD)
资金
- Brain Korea 21 Plus Project in 2021
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry and Energy (MOTIE)
- Korea Semiconductor Research Consortium (KSRC) [10067739, 10080575]
- Synopsys Inc.
By comparing Gate-All-Around Field-Effect Transistors (GAAFETs) with FinFETs at the 3-nm technology nodes, the effect of tapered fin shape on device performance is determined. TCAD simulation is utilized to analyze various figures of merit for different supply voltages, and it is found that the optimal taper angle can enhance the device performance, particularly in terms of AC characteristics.
Through a comparative analysis of gate-all-around field-effect transistors (GAAFETs) with the same layout footprint as FinFETs of 3-nm technology nodes, the effect of the tapered fin shape on device performance is determined using the 3-D technology computer-aided design (TCAD) simulation. Moreover, this comparative study presents the most optimal taper angle in terms of various device figures of merits (FoMs) for a standard supply voltage (V $_{DD}$ ) of 0.7 V and a low V $_{DD}$ of 0.35 V. Since FinFET of sub-3 nm is most affected by the short-channel effect (SCE), the vertical shape with the best electrostatic control is advantageous for dc and ac performances. On the other hand, in the case of GAAFETs, such as nanowire (NW) and nanosheet (NS), although vertical fin is the lowest dc performance due to the smallest effective width, we confirmed the best ac results due to the impact of capacitance gain. Furthermore, we demonstrated that NWFET and NSFET with straight shapes could achieve more than the frequency gain of 2.2x and 1.2x at the same power, respectively, compared to FinFETs in low V $_{DD}$ operation.
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