相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
Min Hoe Cho et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors
Seok-Goo Jeong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
Jae-Yun Lee et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)
Oxygen Defect Stability in Amorphous, C-Axis Aligned, and Spinel IGZO
Michiel J. van Setten et al.
ACS APPLIED ELECTRONIC MATERIALS (2021)
Facile and Stable n+ Doping Process Via Simultaneous Ultraviolet and Thermal Energy for Coplanar ALD-IGZO Thin-Film Transistors
Dong-Gyu Kim et al.
ACS APPLIED ELECTRONIC MATERIALS (2021)
1T-1C Dynamic Random Access Memory Status, Challenges, and Prospects
Alessio Spessot et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD
Seok-Goo Jeong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Hirokazu Fujiwara et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
Min Hoe Cho et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD
Jiazhen Sheng et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors
Xingwei Ding et al.
ELECTRONIC MATERIALS LETTERS (2017)
Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer
Yeo-Myeong Kim et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition
Sung-Min Yoon et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
Jianke Yao et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors
Jong Han Jeong et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2008)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
分享论文
