期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 4, 页码 1830-1834出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3152468
关键词
Artificial oscillatory neuron; insulator-metal transition (IMT); intrinsic plasticity; spiking neural network (SNN)
资金
- National Key Research and Development Project of China [2019YFB2205401]
- National Natural Science Foundation of China [61834001, 62025401, 61904003, 61927901]
- 111 project [B18001]
- Beijing Natural Science Foundation [4212049]
- PKU-Baidu Fund [2020BD022]
This article examines the application of neuronal intrinsic plasticity in neural networks. By adjusting the tunable load resistor and stimulus intensity, the oscillatory threshold of artificial neurons is studied. The results demonstrate that neuronal intrinsic plasticity can improve the performance of neural networks.
Neurons are basic elements of the human brain to transmit and process various kinds of information. Besides the synaptic plasticity, the neuronal intrinsic plasticity (NIP) plays a vital role in improving and stabilizing the neural circuit for learning and adaptation to environment. In this article, we emulate the NIP behavior by combining hybrid VO2/TaOx device with a tunable load resistor (TLR). By adjusting the TLR and stimulus intensity, the oscillatory threshold of artificial neurons can be adaptively modulated. Moreover, inspired by the nervous system, we implement the artificial NIP as an intercept-adjustable rectified linear unit (IA-ReLU) in the conversion-based spiking neural network (SNN). The results indicate that the NIP can mitigate the stuck-at-fault (SAF) effect on a memristor array and improve the recognition accuracy by up to 4.4% compared with the traditional ReLU function. These results demonstrate that the intrinsic plasticity of neurons can play a vital role in spiking neuromorphic computing systems.
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