相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor
Bochang Li et al.
IEEE ELECTRON DEVICE LETTERS (2017)
High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1-x) Oy Gate Dielectric Fabricated on Vacuum Tape
Chuan Yu Han et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H2 gas sensing
Y. Liu et al.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY (2014)
Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors
N. Padma et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2013)
Design Rules for Nanogap-Based Hydrogen Gas Sensors
Junmin Lee et al.
CHEMPHYSCHEM (2012)
Enhanced Sensing Performance of MISiC Schottky-Diode Hydrogen Sensor by Using HfON as Gate Insulator
W. M. Tang et al.
IEEE SENSORS JOURNAL (2011)
Hydrogen sensors - A review
T. Huebert et al.
SENSORS AND ACTUATORS B-CHEMICAL (2011)
Hysteresis behavior of electrical resistance in Pd thin films during the process of absorption and desorption of hydrogen gas
Eunsongyi Lee et al.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY (2010)
Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing
M. Shafiei et al.
SENSORS AND ACTUATORS B-CHEMICAL (2010)
Semiconductor junction gas sensors
Karin Potje-Kamloth
CHEMICAL REVIEWS (2008)
Effect of water in ambient air on hysteresis in pentacene field-effect transistors containing gate dielectrics coated with polymers with different functional groups
Se Hyun Kim et al.
ORGANIC ELECTRONICS (2008)
The effect of general strain on the band structure and electron mobility of silicon
Enzo Ungersboeck et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Modeling of organic thin film transistors: Effect of contact resistances
Dario Natali et al.
JOURNAL OF APPLIED PHYSICS (2007)
Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility
Paul V. Pesavento et al.
JOURNAL OF APPLIED PHYSICS (2006)
Difference in hydrogen sensitivity between Pt and Pd field-effect devices
M Löfdahl et al.
JOURNAL OF APPLIED PHYSICS (2002)
Electron mobility in amorphous silicon thin-film transistors under compressive strain
H Gleskova et al.
APPLIED PHYSICS LETTERS (2001)
Corrosion mechanisms for nickel exposed to the atmosphere
TE Graedel et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2000)