期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 69, 期 5, 页码 2391-2397出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3161614
关键词
Intercalation layer; neuron; oxygen stoichiometry; threshold switching (TS) devices; uniformity; yield
资金
- National Key Research and Development Program [2017YFA0206102]
- National Natural Science Foundation of China [61825404, 61732020, 61821091, 61804167, 61851402, 62104044]
- Major Science and Technology Special Project of China [2017ZX02301007-001]
- China Postdoctoral Science Foundation [2020M681167]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB44000000]
- Project of MOE Innovation Platform
This study systematically investigates the effect of oxygen content on the performance of TS devices based on NbOx films. It is found that decreasing the oxygen content reduces the electroforming voltage and increases the forming yield. Additionally, inserting a high oxygen content NbOy layer improves the stability and uniformity of the devices.
Threshold switching (TS) devices based on NbOx materials show intriguing potential for constructing artificial neurons in a neuromorphic machine. However, the high electroforming voltage, the low TS yield, and the poor device uniformity hinder the practical application of NbOx-based TS devices. In this work, we systematically investigate the effect of film composition on device performance by adjusting the oxygen contents in the NbOx films. The electroforming voltage decreases with lowering the oxygen content, and the forming yield for activating TS behavior increases without an additional reset process. Moreover, we propose a stacked method by inserting a NbOy layer with high oxygen content between the low oxygen NbOx layer and the bottom electrode. The intercalated NbOy layer serves as a virtual bottom electrode after breakdown, enhancing the local electrical field and improving cycle-to-cycle stability and device-to-device uniformity. These results demonstrate that the device performances are greatly improved by optimizing the oxygen content and structure, guiding for practical applications of NbOx-based TS devices in neuromorphic computing.
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