1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage $V_{BR}$ of the diodes. Under the same testing conditions, $V_{BR}$ was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance $R_{{on}}$ of 5.1 m omega center dot cm(2) and low turn-on voltage $V_{{on}}$ of 0.63 V. Given $V_{{on}}$ of <0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest $V_{BR}$ in the reported work up to today.

Automated summary

This article demonstrates high-performance vertical gallium nitride Schottky barrier diodes with helium-implanted edge termination structure, which increase the breakdown voltage by reducing the electric field crowding effect.