4.6 Article

Wideband RF Transmit-Receive Switch for Multi-Nuclei NMR Spectrometers

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2021.3121210

关键词

Switches; PIN photodiodes; Radio frequency; Nuclear magnetic resonance; Insertion loss; Wideband; Switching circuits; Nuclear magnetic resonance; PIN diode driver; radio frequency front-end; signal-to-noise ratio (SNR); spectrometer; wideband TR switches

资金

  1. Khalifa University of Science and Technology, Abu Dhabi, UAE [CIRA-2020-037]

向作者/读者索取更多资源

The utility of wideband high field nuclear magnetic resonance (NMR) spectrometers is essential in various applications. This brief introduces a new design of wideband high-power TR switch for multi-nuclei NMR spectrometers. Experimental results show that the switch has a wide bandwidth, low insertion loss, and high isolation.
The utility of wideband high field nuclear magnetic resonance (NMR) spectrometers is significant in many applications. Wideband radio frequency (RF) front-ends are critical for the realization of multi-nuclei spectrometers. To realize such systems, wideband Transmit-Receive (TR) switches and low noise amplifiers (LNA) should be implemented at the RF front-end (FE) of the system. Most of the common designs used nowadays on NMR spectrometers are either inherently narrowband and/or of relatively high noise-figure which limit the overall system performance to a large extent. To improve upon the conventional FE performance, a new design of wideband high-power TR switch which could be devised for multi-nuclei NMR spectrometers is introduced in this brief. The developed wideband TR switch employs PIN diode switching technique and a dual-driver circuit. A prototype was constructed and experimentally characterized. The small-signal measurement results show that the switch has a bandwidth from 30 - 200MHz where the return loss is maintained below 18 dB with insertion loss of 0.09 - 0.2dB in the transmit mode and 0.11 - 0.37dB in the receive mode. It also exhibits a very high isolation of 63 - 80dB over the entire bandwidth. It is demonstrated that the switch can withstand continuous-wave RF input with power levels as high as 125 W while maintaining low insertion loss and high isolation.

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