期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
卷 69, 期 6, 页码 2610-2616出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2022.3170317
关键词
Radar; Sensors; Inductors; Receivers; Gain; CMOS technology; Transistors; CMOS mm-wave receiver; electromagnetic (EM) simulations; transformers; fully-depleted (FD) silicon-on-insulator (SOI); power amplifier; transformer-based VCO
This brief overview analyzes recent advancements in CMOS automotive radar sensors, specifically focusing on critical circuit designs at mm-wave frequencies. Highly integrated CMOS technologies allow for low power consumption, reduced costs, and increased data processing capacity and integration, but the main challenge remains in the radio front-end requirements of long-range radars.
This brief gives an overview of recent advancements in CMOS automotive radar sensors, focusing on the most critical circuit design at mm-wave frequencies. Highly scaled CMOS technologies enable very low-power consumption, reduced costs, and higher data processing capacity and integration compared to state-of-the-art SiGe BiCMOS chip-set solutions commonly adopted in commercial products. The very bottleneck is still represented by the radio front-end due to the challenging requirements of long-range radars. Circuit topologies and design tradeoffs are here discussed with reference to critical building blocks of the mm-wave radar front-end, reporting circuit implementations for a 77-GHz long-range radar sensor in a 28-nm fully-depleted silicon-on-insulator CMOS technology.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据