期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
卷 69, 期 6, 页码 2635-2640出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2022.3171136
关键词
Integrated circuit modeling; Transistors; Semiconductor device modeling; Mathematical models; MOSFET; Aging; Data models; Holistic modeling; transistor modeling; process variations; transistor aging; cryogenic temperatures; total ionizing radiation; integrated circuits
资金
- Technological Research Council of Turkey [TUB. ITAK 1001 118E253]
This tutorial introduces the concept of holistic modeling in the context of metal-oxide-semiconductor field-effect-transistors (MOSFETs). It compares standard MOSFET modeling approaches, explains factors impacting MOSFET operation, and demonstrates the need for considering these factors. An implementation strategy for holistic modeling is proposed.
This tutorial presents the holistic modeling concept in the context of metal-oxide-semiconductor field-effect-transistors (MOSFETs). First, the standard MOSFET modeling approaches will be comparatively discussed. Subsequently, several factors impacting the operation of MOSFETs will be explained in terms of their physical origins and their modeling, as already undertaken in the literature. These factors include process variations, time-based degradation, as well as extreme environmental conditions, such as low or high temperatures and ionizing radiation. Subsequently, the need for considering these phenomena in joint configurations is demonstrated through experimental data. Finally, an implementation strategy for holistic modeling will be proposed by introducing 'extreme corners', which represent the combinations of conventional process corners with the mentioned factors at various values of interest.
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