Demonstration of the Flip-Chip Bonded Evanescently Coupled III-V-on-Si Sampled Grating DFB Laser

A hybrid integrated III-V-on-Si sampled grating distributed feedback laser by flip-chip bonding an III-V gain chip to Si-on-insulator photonic integrated circuits is reported in this article. Light is evanescently coupled to the Si waveguide with the sampled grating defined for the single-wavelength operation. The laser operates continuous wave with a side mode suppression ratio of more than 30 dB around 1550 nm. The laser threshold is about 65 mA with a maximum output power of 2.0 mW at 25 degrees C.

Automated summary

This article reports a hybrid integrated III-V-on-Si sampled grating distributed feedback laser, which combines an III-V gain chip with a Si-on-insulator photonic integrated circuit by flip-chip bonding. The laser operates at a single wavelength with continuous wave mode and high side mode suppression ratio. It has a low threshold and high output power.