期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 34, 期 12, 页码 621-624出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2022.3177171
关键词
Deep ultraviolet light-emitting diodes; Ga2O3-Al2O3:Ga2O3 multiple quantum wells; vapor cooling condensation system; whole metal oxide based-films
资金
- Ministry of Science and Technology of the Republic of China [MOST 108-2221-E-006-215MY3, MOST 108-2221-E-155-029-MY3]
In this study, metal oxide-based multiple quantum wells (MQWs)/n-HfO2:Ga2O3 deep ultraviolet light-emitting diodes (DUV-LEDs) were manufactured and studied. By replacing MQWs with a single i-Ga2O3 active layer, the luminance of the DUV-LEDs was improved due to the effective carrier recombination in the i-Ga2O3 well caused by the effective carrier block of the i-Al2O3:Ga2O3 barrier in the MQWs.
In this work, whole metal oxide-based p-NiO/i-Ga2O3-i-Al2O3:Ga2O3 multiple quantum wells (MQWs)/n-HfO2:Ga2O3 deep ultraviolet light-emitting diodes (DUV-LEDs) were manufactured and studied. To investigate the improved luminance of the MQWs, single i-Ga2O3 active layer was utilized to replace MQWs in the DUV-LEDs. The vapor cooling condensation system was used to deposit n-HfO2:Ga2O3, i-Ga2O3, and i-Al2O3:Ga2O3 films on sapphire substrate. Besides, the radio frequency magnetron sputtering system was used to deposit p-NiO film onto the MQWs. As the measurement of electroluminescence spectra, the peak emission wavelength of both the devices with MQWs and i-Ga2O3 active layer was approximately 243 nm. Compared with the utilization of single i-Ga2O3 active layer, the peak luminance intensity of the DUVLEDs with MQWs was enhanced due to the effective carrier recombination in the i-Ga2O3 well caused by the effective carrier block of the i-Al2O3:Ga2O3 barrier in the MQWs.
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