A 57-GHz CMOS Reflection Amplifier in 90-nm CMOS

A reflection amplifier is designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band. Different from the conventional configurations, a proposed capacitive transmission line at the transistor source port results in negative input resistance and return gain. The return gain is further enhanced by adding an inductor at the drain port. The fabricated die occupies 0.38 mm(2) and consumes low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.

Automated summary

The reflection amplifier designed using 90-nm bulk CMOS technology for applications in the 60-GHz frequency band features a unique capacitive transmission line at the transistor source port that results in negative input resistance and return gain. The addition of an inductor at the drain port further enhances the return gain, with the fabricated die occupying a small 0.38 mm(2) area and consuming low dc power of 4.4 mW. The measured data show a peak gain of 8.4 dB at 57 GHz.