4.6 Article

Highly Efficient Terahertz Beam-Steerable Integrated Radiator Based on Tunable Boundary Conditions

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 57, 期 5, 页码 1314-1331

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2022.3146720

关键词

Boundary conditions; Switches; Harmonic analysis; Surface waves; Surface impedance; Voltage; Impedance; Beam steering; harmonic oscillator; SiGe BiCMOS; terahertz (THz); voltage-control oscillator (VCO)

资金

  1. National Key Research and Development Program of China [2020YFB1805004, 2019YFB2204701]
  2. National Natural Science Foundation of China [61941103]
  3. Beijing National Research Center for Information Science and Technology (BNRist)
  4. Shenzhen Research and Development Funds for Science and Technology [JCYJ20180508152019687]

向作者/读者索取更多资源

This article presents a highly efficient terahertz beam-steerable integrated radiator based on tunable boundary conditions. The radiation patterns of the central slot radiator can be altered by tuning the boundary conditions with switched slots. This technique enables a beam-steerable THz antenna with high radiation efficiency. Additionally, the article proposes a 2-D harmonic boosting technique to boost the DC-THz efficiency of the VCO.
In this article, a highly efficient terahertz (THz) beam-steerable integrated radiator based on tunable boundary conditions is presented. The boundary conditions seen by the central slot radiator are tuned by the switched slots, and the corresponding radiation patterns can be altered. This technique enables a beam-steerable THz antenna with high radiation efficiency. In addition, the DC-THz efficiency of the harmonic voltage-control oscillator (VCO) is boosted through the 2-D harmonic boosting technique. Based on the two techniques above, the THz beam-steerable radiator has been implemented in a 130-nm SiGe BiCMOS process ( $f_{{T}}$ / $f_{{max}} $ = 300/450 GHz). Without silicon lens, it achieves 60 degrees scan ranges in the E-plane, an equivalent isotropic radiated power (EIRP) of 2.2 dBm, -2.8 dBm radiation power, 0.91% DC-THz efficiency, and the tuning range of 11.5% for the supply of 1.7 V. With silicon lens, it achieves the EIRP of 21.66 dBm, 0.56-dBm radiation power, 2.22% DC-THz efficiency, and tuning range of 10.8% for the supply of 1.6 V. Among the silicon-based beam-steerable radiators over 300 GHz, it achieves state-of-the-art dc-to-THz efficiency.

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