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Xiaoli Sun et al.
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Qingyu Wang et al.
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Min Ren et al.
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AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence
Andrew H. Jones et al.
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Mengyuan Huang et al.
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Madison E. Woodson et al.
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Scott J. Maddox et al.
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X. Zhou et al.
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Alberto Tosi et al.
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S. J. Maddox et al.
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InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168 A/W.GHz for 25 Gbit/s high-speed operations
M. Nada et al.
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Wenlu Sun et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2012)
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Pin Jern Ker et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 (2012)
HgCdTe avalanche photodiodes: A review
Anand Singh et al.
OPTICS AND LASER TECHNOLOGY (2011)
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
Andrew R. J. Marshall et al.
OPTICS EXPRESS (2011)
Temperature Dependence of Avalanche Breakdown in InP and InAlAs
Lionel Juen Jin Tan et al.
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G. J. Rees et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
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IEEE PHOTONICS TECHNOLOGY LETTERS (2009)
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Yimin Kang et al.
NATURE PHOTONICS (2009)
The HgCdTe electron avalanche photodiode
J. Beck et al.
JOURNAL OF ELECTRONIC MATERIALS (2006)
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N Duan et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2005)
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AN Semenov et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs
C Groves et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2005)
Quasi-direct UV/blue GaP avalanche photodetectors
AL Beek et al.
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Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes
C Groves et al.
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InP/InGaAs pin photodiode structure maximising bandwidth and efficiency
Y Muramoto et al.
ELECTRONICS LETTERS (2003)
Optimal excess noise reduction in thin heterojunction Al0.6Ga0.4As-GaAs avalanche photodiodes
OH Kwon et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2003)
The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes
CH Tan et al.
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BK Ng et al.
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Monte Carlo simulations of Hg0.7Cd0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise
F Ma et al.
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Ultra-low noise avalanche photodiodes with a centered-well multiplication region
SL Wang et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2003)
Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
S Wang et al.
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Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9)
BK Ng et al.
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Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: Theory and experiment
MA Hayat et al.
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XW Li et al.
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MA Saleh et al.
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Avalanche multiplication characteristics of Al0.8Ga0.2As diodes
BK Ng et al.
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Fokker-Planck model for nonlocal impact ionization in semiconductors
B Jacob et al.
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Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region
XG Zheng et al.
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Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP
SK Mathis et al.
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Avalanche photodiodes with an impact-ionization-engineered multiplication region
P Yuan et al.
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Avalanche noise measurement in thin Si p+-i-n+ diodes
CH Tan et al.
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Avalanche noise characteristics of thin GaAs structures with distributed carrier generation
KF Li et al.
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Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses
P Yuan et al.
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