期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 28, 期 2, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2021.3112494
关键词
PIN photodiodes; Silicon; P-i-n diodes; Optical receivers; Optical sensors; Optical device fabrication; High-speed optical techniques; Group-IV semiconductors; Integrated photonics; Avalanche photodetectors; Energy consumption; Short-reach communications; CMOS technology
资金
- Slovak Research and Development Agency [PP-COVID-20-0100]
This study comprehensively investigates the performance of avalanche p-i-n photodetectors with lateral silicon-germanium-silicon heterojunctions and demonstrates their reliable opto-electrical performance and low energy consumption. These findings pave the way for high-performing receivers for energy-aware data links in next-generation short-distance data communications.
Fast, low-noise and sensitive avalanche photo-receivers are needed for surging short-reach photonic applications. Limitations concerning bandwidth, throughput and energy consumption should be overcome. In this work, we comprehensively study the performance opportunities provided by avalanche p-i-n photodetectors with lateral silicon-germanium-silicon heterojunctions. Our aim is to circumvent the need for chip-bonded electronic amplifiers. In particular, we demonstrate that avalanche photodetectors based on silicon-germanium-silicon heterostructures yield reliable opto-electrical performances, with high gain-bandwidth products up to 480 GHz and low effective ionization ratios down to 0.15. Moreover, they improve power sensitivities for high-speed optical signals and have a low energy dissipation of only a few fJ per received information bit. These results pave the way for high-performing receivers for energy-aware data links, in next-generation short-distance data communications.
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