Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

Based on MOSFETs with four different gate stacks, we extract the oxide trap density and transconductance from the low frequency noise and DC transfer characteristics at room temperature, respectively. With the same gate stacks, Hall mobility as a function of carrier density is and the critical density is extracted at low temperatures. These physical quantities are analyzed and correlated explicitly, offering a method to qualitatively compare the quality of the four gate stacks for cryogenic MOS devices, and providing further insight into the material physics at cryogenic temperatures.

Automated summary

This study investigates the quality of four different gate stacks for cryogenic MOS devices by analyzing the oxide trap density, transconductance, Hall mobility, and critical density. The results provide valuable insights into the material physics at cryogenic temperatures.