4.6 Article

Measurement of Self-Heating of High-Frequency CMOS Clock Buffers

期刊

IEEE ELECTRON DEVICE LETTERS
卷 43, 期 5, 页码 686-688

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3161120

关键词

Temperature measurement; Temperature sensors; Clocks; Frequency measurement; Current measurement; Field effect transistors; Temperature; Clock buffer; self-heating; high-frequency; reliability; field-effect transistor; finFET; CMOS; subthreshold slope; measurement

向作者/读者索取更多资源

A technique is introduced to measure the temperature of a large, dense, CMOS clock buffer while it is operating. The technique utilizes the subthreshold slope of a single pFET, eliminating the need for special technology enhancements for thermal sensing and relying solely on simple electrical measurements. The technique has been demonstrated to work in a realistic test site fabricated in a 14 nm finFET technology.
A technique is presented to measure the temperature of a large, dense, CMOS clock buffer while it is operating. The technique uses the subthreshold slope of a single pFET, thereby avoiding introducing special technology enhancements for thermal sensing, and uses purely simple electrical measurements. The technique is demonstrated to work in the presence of high-frequency digital switching in a realistic test site fabricated in a 14 nm finFET technology.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据