期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 5, 页码 686-688出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3161120
关键词
Temperature measurement; Temperature sensors; Clocks; Frequency measurement; Current measurement; Field effect transistors; Temperature; Clock buffer; self-heating; high-frequency; reliability; field-effect transistor; finFET; CMOS; subthreshold slope; measurement
A technique is introduced to measure the temperature of a large, dense, CMOS clock buffer while it is operating. The technique utilizes the subthreshold slope of a single pFET, eliminating the need for special technology enhancements for thermal sensing and relying solely on simple electrical measurements. The technique has been demonstrated to work in a realistic test site fabricated in a 14 nm finFET technology.
A technique is presented to measure the temperature of a large, dense, CMOS clock buffer while it is operating. The technique uses the subthreshold slope of a single pFET, thereby avoiding introducing special technology enhancements for thermal sensing, and uses purely simple electrical measurements. The technique is demonstrated to work in the presence of high-frequency digital switching in a realistic test site fabricated in a 14 nm finFET technology.
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