期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 6, 页码 958-961出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3168797
关键词
1/f noise; ferroelectric tunnel junction (FTJ); low-frequency noise (LFN); scaling; length
资金
- National Research Foundation of Korea [NRF-2021R1A2C3009069]
- BK21 FOUR Program of the Education and Research Program for Future ICT Pioneers, Seoul National University
This study investigates the effects of length and width scaling on the low-frequency noise characteristics of ferroelectric tunnel junctions (FTJs). The results show that in the high-resistance state, 1/f noise increases proportionally with length and width scaling, while shot noise is not affected by scaling. In the low-resistance state, the dependence of 1/f noise on length scaling is more sensitive than on width scaling due to the influence of process-induced damaged edge regions on the switching and conduction mechanisms.
We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semiconductor (TiN/HfZrO2/SiO2/n(+) Si). In the high-resistance state, 1/f noise increases proportionally to 1/(WL beta)-L-alpha(alpha congruent to 1, beta > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence on L scaling than W scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.
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