Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios (8 x 10(5) for pFinFET and 3.3 x 10(5) for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 VN) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.

Automated summary

This study demonstrates that performance improvement on Ge nFinFET, pFinFET, and CMOS inverter can be achieved by using a novel low-temperature damage-free supercritical phase fluid (SCF) treatment. The SCF treatment effectively reduces unstable oxidation states, oxygen vacancies, and interface traps, resulting in higher on-off current ratios, lower S.S., higher on current, and better reliability in Ge FinFETs. Furthermore, the Ge FinFET CMOS inverter shows a higher voltage gain with the SCF treatment.