875-MW/cm2 Low-Resistance NO2 p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs

In this study, an Al2O3 passivated, NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on a chemical mechanical planarized high-quality heteroepitaxial diamond (Kenzan diamond (R)) substrate. This MOSFET exhibited a low specific ON-resistance of 7.54 m Omega.cm(2) and a high OFF-state breakdown voltage of -2568 V. The chemical mechanical planarization (CMP) was performed for 200 h on the diamond surface which effectively removed the subsurface damages resulting in a low resistive diamond surface. Thus, the MOSFET showed a high drain current density of -0.68 A/mm and a maximum available power density (Baliga's figure-of-merit) of 874.6 MW/cm(2)-the highest reported value for diamond devices.

Automated summary

In this study, a passivated, NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on a chemical mechanical planarized high-quality heteroepitaxial diamond substrate. The MOSFET had a low specific ON-resistance and a high OFF-state breakdown voltage. Chemical mechanical planarization effectively removed subsurface damages on the diamond surface, resulting in a low resistive diamond surface. Therefore, the MOSFET exhibited a high drain current density and the highest reported maximum available power density for diamond devices.