Ion beam sputter deposition of SiO2 thin films using oxygen ions

SiO2 thin films were grown by ion beam sputter deposition using oxygen ions under systematic variation of ion energy and geometrical parameters (ion incidence angle, polar emission angle, scattering angle). The SiO2 thin films were characterized with respect to film thickness, growth rate, surface roughness, crystallinity, mass density, and optical properties. The growth rates show an over-cosine, forward-tilted angular distribution. It is increasing with increasing ion energy and increasing ion incidence angle. The films were found to be amorphous with a root mean square roughness between 0.34nm and 0.54 nm. The mass density increases slightly with increasing ion energy. Optical properties vary only slightly. At small scattering angles, the index of refraction is increasing with decreasing ion energy or increasing ion incidence angle. At large scattering angles, it is vice versa, i.e., the index of refraction is decreasing with decreasing ion energy or increasing ion incidence angle. The data are compared and discussed with previous studies of the ion beam sputter deposition of SiO2 thin films using Ar or Xe ions.

Automated summary

SiO2 thin films were grown by ion beam sputter deposition using oxygen ions under systematic variation of ion energy and geometrical parameters. The films were found to be amorphous with a certain level of surface roughness and mass density. Optical properties showed minimal variations, while the refractive index exhibited different trends with varying ion energy and incidence angle.