期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 55, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.55.05FL02
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资金
- Grants-in-Aid for Scientific Research [25000011, 16H06415] Funding Source: KAKEN
The N-2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N-2 and/ or N-2-CO gas atmosphere at 1923-1973K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N-2 atmosphere at 1973K for 2 h. The rough surface was, however, much improved for the AlN annealed in N-2-CO gas atmosphere. The thermodynamic principle of the N-2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N-2-CO system. Voids and Y-aluminum oxynitride (Y-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, gamma-AlON, and sapphire are presented, and misfits among them are discussed. (C) 2016 The Japan Society of Applied Physics
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