Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

The relationship between the carbon concentration and electrical characteristics of silicon-doped AlGaN (Al > 0.5) was investigated using a high-flow-rate metal organic vapor phase epitaxy (MOVPE) reactor. The carbon concentration and electrical properties of AlGaN (Al > 0.5) were measured as a function of the growth rate, V/III ratio, and growth temperature. The growth rate of Al0.6Ga0.4N was linearly controlled up to 7.2 mu m/h under a constant ammonia (NH3) flow rate. However, a decrease in V/III ratio resulted in an increase in carbon concentration to 8 x 10(17) cm(-3). With increased growth temperature, the carbon concentration decreased to less than 2 x 10(17) cm(-3) without showing any reduction in growth rate. As a result, n-type Al0.6Ga0.4N with a carrier concentration of 5.4 x 10(18) cm(-)3 and a resistivity of 2.2 x 10(-2) Omega.cm was obtained. (C) 2016 The Japan Society of Applied Physics