期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 55, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.55.04EH08
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资金
- Grants-in-Aid for Scientific Research [25249035, 26289090] Funding Source: KAKEN
Direct band gap electroluminescence (EL) and light detection were studied at room temperature for n-type bulk germanium (Ge) by using fin-type asymmetric lateral metal/Ge/metal diodes. HfGe/Ge and PtGe/Ge contacts were used for injecting holes. Electron cyclotron resonance plasma oxidation and physical vapor deposition bilayer passivation (BLP) methods were employed for passivating the surface of the active region. A high EL intensity and a low dark current intensity were observed for the sample with PtGe/Ge contact and BLP, owing to the small/large barrier height of holes/electrons for PtGe/Ge contact, respectively, and the low density of interface states for the active region with BLP. The local-heating-induced redshift of the EL peak for the sample with PtGe/Ge contact is smaller than that for the sample with HfGe/Ge contact, owing to the lower parasitic resistance of PtGe/Ge contact. The diode with PtGe/Ge contact and BLP shows an on/off ratio of similar to 10(4) and a responsivity of 0.70A/W, corresponding to an external quantum efficiency of 56.0% under a wavelength of 1.55 mu m. (C) 2016 The Japan Society of Applied Physics
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